Solid State Physics Group
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Research in the Solid State Physics group is concerned with the investigation of semiconductor systems and nanostructures using spectroscopic techniques and theoretical modelling. In particular, this work is focussed on the detection, modelling and understanding of the physical properties of atomic-sized defects (point defects) in semiconductor materials (diamond, silicon, SiGe alloys and superlattices) and the development and application of nano-optical microscopy techniques and their application to semiconductor and molecular nanostructures.
Research in Solid State Physics
The Solid State Physics group works on detecting, modelling and understanding defects in semiconductors (diamond, silicon and Si/Ge) and on techniques of high resolution imaging. Experimental techniques include electron paramagnetic spectroscopy, optical spectroscopy (luminescence, absorption, Raman) and scanning probe microscopy. Theoretical methods employed include density functional theory of the electronic structure of defects and finite difference time domain simulations of photonic systems. The imaging ranges from electron paramagnetic resonance maging and confocal Raman spectroscopy of semiconductor defects and quantum wires and dots, to scanning near-field optical microscopy (SNOM) of nanostructured materials, including light-emitting polymers.
Defects in Semiconductors
A large part of the research in the Solid State Group is directed towards the investigation of the physical properties of atomic-sized defects (point defects) in semiconductor materials (diamond, silicon, SiGe alloys and superlattices). The work being carried out includes development of experimental techniques, production of specially doped material, spectroscopic investigations of the material using optical and electron paramagnetic resonance methods and first principles quantum-mechanical calculations of defects.Combining experimental expertise with theoretical authority, the Solid State Group at King's has proven itself to be a world leader in the investigation of impurities in technologically valuable materials. Many of the spectroscopic techniques - particularly for optical measurements - that were developed in the Group have been adopted by other groups throughout the world.In particular, the group is a major centre for work on diamond; its members co-ordinate an EU Research Training Network and an EPSRC Network , with research within the group focussed at present on radiation damage studies and the investigation of transition metals and dopants in diamond. Research on silicon has been recently concerned with the study of the role of hydrogen and carbon in silicon, with the emphasis now moved to exploiting the available data on defects in silicon to probe the growth of interstitial clusters in ion-implanted silicon, and on studies of defects in SiGe.
Nano-Optical Microscopy
Advances in recent years in nano- and bio-technology have led to the need for optical imaging tools able to resolve features with sizes in the range of 1 nm to 1 µm. Access to optical properties on such length scales has been made possible with the development of scanning near-field optical microscopy (SNOM), in which the near-field optical interaction between a nanoscopic optical probe and a sample of interest is exploited to investigate optically surfaces at a resolution inaccessible by traditional far-field optical microscopy. Our programme on SNOM includes theoretical modelling and the development of novel techniques for the achievement of ~10 nm spatial resolution for fluorescence and Raman microscopy, as well as the application of such techniques to optical spectroscopic investigations of semiconductor and molecular nanostructures. We co-ordinate an EPSRC Network on nano-optical microscopy.Research within the group is also directed towards low-temperature diffraction-limited scanning confocal photoluminescence and Raman spectroscopy on sub-micron lengthscales, for the study of the physics of semiconductor nanostructures such as quantum wires and dots and of polycrystalline and irradiated diamond.
Read more about Nano-optical microscopy.
Defects in Semiconductors
A large part of the research in the Solid State Group is directed towards the investigation of the physical properties of atomic-sized defects (point defects) in semiconductor materials (diamond, silicon, SiGe alloys and superlattices). The work being carried out includes development of experimental techniques, production of specially doped material, spectroscopic investigations of the material using optical and electron paramagnetic resonance methods and first principles quantum-mechanical calculations of defects.Combining experimental expertise with theoretical authority, the Solid State Group at King's has proven itself to be a world leader in the investigation of impurities in technologically valuable materials. Many of the spectroscopic techniques - particularly for optical measurements - that were developed in the Group have been adopted by other groups throughout the world.In particular, the group is a major centre for work on diamond; its members co-ordinate an EU Research Training Network and an EPSRC Network , with research within the group focussed at present on radiation damage studies and the investigation of transition metals and dopants in diamond. Research on silicon has been recently concerned with the study of the role of hydrogen and carbon in silicon, with the emphasis now moved to exploiting the available data on defects in silicon to probe the growth of interstitial clusters in ion-implanted silicon, and on studies of defects in SiGe.
Nano-Optical Microscopy
Advances in recent years in nano- and bio-technology have led to the need for optical imaging tools able to resolve features with sizes in the range of 1 nm to 1 µm. Access to optical properties on such length scales has been made possible with the development of scanning near-field optical microscopy (SNOM), in which the near-field optical interaction between a nanoscopic optical probe and a sample of interest is exploited to investigate optically surfaces at a resolution inaccessible by traditional far-field optical microscopy. Our programme on SNOM includes theoretical modelling and the development of novel techniques for the achievement of ~10 nm spatial resolution for fluorescence and Raman microscopy, as well as the application of such techniques to optical spectroscopic investigations of semiconductor and molecular nanostructures. We co-ordinate an EPSRC Network on nano-optical microscopy.Research within the group is also directed towards low-temperature diffraction-limited scanning confocal photoluminescence and Raman spectroscopy on sub-micron lengthscales, for the study of the physics of semiconductor nanostructures such as quantum wires and dots and of polycrystalline and irradiated diamond.
Read more about Nano-optical microscopy.
Current Funding:
King's College London has recently committed significant funding from the Strategic Research Infrastructure Fund (SRIF) for the purchase of state-of-the-art equipment for the laboratories of the solid state group.
EPSRC:
EU funded:
EPSRC:
- Research grant on Transition metals in diamond
- Network in Diamond and diamond-like carbon
- International collaboration on Ion implantation in silicon
- Research grant on Defects in SiGe (in parallel with UMIST)
- Research grant on Scanning nano-probe optical spectroscopy
- Network in Nano-optical microscopy
- Research grant on Low temperature confocal spectrsocopy of semiconductors
- Research grant on Electro-optical characterisation of of conjugated polymer heterogenous structures with a SNOM*
- Part of UK consortium for Carbon-based electronics
EU funded:
- EU research training network on Doped Diamond Devices and Sensors
- EU Technology for neutron instrumentation network
- EU INTAS grant Stress-induced effects on oxygen agglomeration processes and defect interactions in silicon